Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yield dual-gate organic transducers. The process technology is scaled up to 150-mm wafers. The transducers are potentiometric sensors where the detection relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screening length. The mechanism is assessed by pHmeasurements. The threshold voltage shift depends on pH as DVth¼(Ctop/Cbottom)T58mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion-sensitive field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed.
Spijkman M.-J., Brondijk J.J., Geuns T.C.T., Smits E. C. P., Cramer T., Zerbetto F., et al. (2010). Dual-gate organic field-effect transistors as potentiometric sensors in aqueous solution. ADVANCED FUNCTIONAL MATERIALS, 20, 898-905 [10.1002/adfm.200901830].
Dual-gate organic field-effect transistors as potentiometric sensors in aqueous solution
CRAMER, TOBIAS;ZERBETTO, FRANCESCO;
2010
Abstract
Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yield dual-gate organic transducers. The process technology is scaled up to 150-mm wafers. The transducers are potentiometric sensors where the detection relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screening length. The mechanism is assessed by pHmeasurements. The threshold voltage shift depends on pH as DVth¼(Ctop/Cbottom)T58mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion-sensitive field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
