Raman spectroscopy was employed to investigate nanometric thick films of the organic semiconductor 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene, following a comprehensive vibrational characterization of the compound condensed phases at various excitation wavelengths. UV Raman excitation enabled the characterization of the thin films, revealing that the molecular orientation at the film/air interface is characterized by a different organization and/or a high degree of disorder compared to the bulk phase. The low penetration depth of the UV Raman excitation allows for the retrieval of this information, unlike the XRD data.

Salzillo T., Li J., Pfattner R., Venuti E., Mas-Torrent M., D'Amico F. (2024). Probing molecular arrangements of the organic semiconductor 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene thin film at the interface by UV Resonant Raman scattering. SURFACES AND INTERFACES, 44, 1-9 [10.1016/j.surfin.2023.103752].

Probing molecular arrangements of the organic semiconductor 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene thin film at the interface by UV Resonant Raman scattering

Salzillo T.
Primo
;
Venuti E.;
2024

Abstract

Raman spectroscopy was employed to investigate nanometric thick films of the organic semiconductor 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene, following a comprehensive vibrational characterization of the compound condensed phases at various excitation wavelengths. UV Raman excitation enabled the characterization of the thin films, revealing that the molecular orientation at the film/air interface is characterized by a different organization and/or a high degree of disorder compared to the bulk phase. The low penetration depth of the UV Raman excitation allows for the retrieval of this information, unlike the XRD data.
2024
Salzillo T., Li J., Pfattner R., Venuti E., Mas-Torrent M., D'Amico F. (2024). Probing molecular arrangements of the organic semiconductor 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene thin film at the interface by UV Resonant Raman scattering. SURFACES AND INTERFACES, 44, 1-9 [10.1016/j.surfin.2023.103752].
Salzillo T.; Li J.; Pfattner R.; Venuti E.; Mas-Torrent M.; D'Amico F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/956049
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