This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 μm, 35 μm and 50 μm.
A new low gain avalanche diode concept: the double-LGAD / Carnesecchi, F.; Strazzi, S.; Alici, A.; Arcidiacono, R.; Cartiglia, N.; Cavazza, D.; Durando, S.; Ferrero, M.; Margotti, A.; Menzio, L.; Nania, R.; Sabiu, B.; Scioli, G.; Siviero, F.; Sola, V.; Vignola, G.. - In: THE EUROPEAN PHYSICAL JOURNAL PLUS. - ISSN 2190-5444. - STAMPA. - 138:11(2023), pp. 990.1-990.7. [10.1140/epjp/s13360-023-04621-x]
A new low gain avalanche diode concept: the double-LGAD
Carnesecchi, F.
;Strazzi, S.
;Alici, A.;Sabiu, B.;Scioli, G.;
2023
Abstract
This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 μm, 35 μm and 50 μm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
