This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 μm, 35 μm and 50 μm.
Carnesecchi, F., Strazzi, S., Alici, A., Arcidiacono, R., Cartiglia, N., Cavazza, D., et al. (2023). A new low gain avalanche diode concept: the double-LGAD. THE EUROPEAN PHYSICAL JOURNAL PLUS, 138(11), 1-7 [10.1140/epjp/s13360-023-04621-x].
A new low gain avalanche diode concept: the double-LGAD
Carnesecchi, F.
;Strazzi, S.
;Alici, A.;Sabiu, B.;Scioli, G.;
2023
Abstract
This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 μm, 35 μm and 50 μm.| File | Dimensione | Formato | |
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