This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 mu m and an area of 1 x 1 mm(2) have been considered, together with an additional HPK 50-mu m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 and 240 V has been obtained for the 25 and 35 mu m thick UFSDs, respectively.
Beam test results of 25 and 35 μ m thick FBK ultra-fast silicon detectors / Carnesecchi F.; Strazzi S.; Alici A.; Arcidiacono R.; Borghi G.; Boscardin M.; Cartiglia N.; Centis Vignali M.; Cavazza D.; Dalla Betta G.-F.; Durando S.; Ferrero M.; Ficorella F.; Ali O.H.; Mandurrino M.; Margotti A.; Menzio L.; Nania R.; Pancheri L.; Paternoster G.; Scioli G.; Siviero F.; Sola V.; Tornago M.; Vignola G.. - In: THE EUROPEAN PHYSICAL JOURNAL PLUS. - ISSN 2190-5444. - STAMPA. - 138:1(2023), pp. 99.1-99.8. [10.1140/epjp/s13360-022-03619-1]
Beam test results of 25 and 35 μ m thick FBK ultra-fast silicon detectors
Carnesecchi F.
;Strazzi S.
;Alici A.;Scioli G.;
2023
Abstract
This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 mu m and an area of 1 x 1 mm(2) have been considered, together with an additional HPK 50-mu m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 and 240 V has been obtained for the 25 and 35 mu m thick UFSDs, respectively.| File | Dimensione | Formato | |
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