This paper presents the design of a rectenna integrated on silicon, using a multilayer substrate composed of silicon and air. The rectenna is designed to harvest microwave energy at 2.45 GHz. The substrate structure is composed of three layers of high-resistivity silicon (HRSi, εr = 11.7) where the central layer presents an air cavity obtained through etching process. The chosen feeding structure for the antenna is based on a planar microstrip feeding line while for the rectifier a planar matching network is adopted to allow the maximum power transfer. The adopted rectifier topology is a voltage doubler, consisting of a pair of Skyworks SMS7630-079LF Schottky diodes. The synthetized low-permittivity substrate is compatible with on-chip systems silicon and assure a 84 % radiation efficiency with a maximum gain of 7.76 dBi, for the patch antenna. The overall efficiency of the rectenna is 45% for a received power level of 7 dBm.

Trovarello, S., Aldrigo, M., Masotti, D., Dragoman, M., Costanzo, A. (2023). Design of an Integrated Rectenna on Multi-layer High-Resistivity Silicon Substrate. NEW YORK, USA : IEEE [10.23919/URSIGASS57860.2023.10265455].

Design of an Integrated Rectenna on Multi-layer High-Resistivity Silicon Substrate

Trovarello, Simone;Masotti, Diego;Costanzo, Alessandra
2023

Abstract

This paper presents the design of a rectenna integrated on silicon, using a multilayer substrate composed of silicon and air. The rectenna is designed to harvest microwave energy at 2.45 GHz. The substrate structure is composed of three layers of high-resistivity silicon (HRSi, εr = 11.7) where the central layer presents an air cavity obtained through etching process. The chosen feeding structure for the antenna is based on a planar microstrip feeding line while for the rectifier a planar matching network is adopted to allow the maximum power transfer. The adopted rectifier topology is a voltage doubler, consisting of a pair of Skyworks SMS7630-079LF Schottky diodes. The synthetized low-permittivity substrate is compatible with on-chip systems silicon and assure a 84 % radiation efficiency with a maximum gain of 7.76 dBi, for the patch antenna. The overall efficiency of the rectenna is 45% for a received power level of 7 dBm.
2023
Proceedings of 2023 XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS)
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Trovarello, S., Aldrigo, M., Masotti, D., Dragoman, M., Costanzo, A. (2023). Design of an Integrated Rectenna on Multi-layer High-Resistivity Silicon Substrate. NEW YORK, USA : IEEE [10.23919/URSIGASS57860.2023.10265455].
Trovarello, Simone; Aldrigo, Martino; Masotti, Diego; Dragoman, Mircea; Costanzo, Alessandra
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/949700
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