The possibility to reveal the electric potential distribution arising from straight charged dislocations in silicon by means of electron holography techniques in the transmission mode is considered. Using the Read model for a charged dislocation two experimental arrangements are investigated with the line charge parallel or perpendicular to the electron beam. Although contour maps should be revealable with both set-ups, it turns out that the second case is more versatile and suitable for displaying the dislocation charge. Beam injection conditions are also discussed. © 1995 Elsevier Science B.V. All rights reserved.
Cavalcoli D., Matteucci G., Muccini M. (1995). Simulation of electron holographic contour maps of linear charged dislocations. ULTRAMICROSCOPY, 57(4), 385-390 [10.1016/0304-3991(94)00169-N].
Simulation of electron holographic contour maps of linear charged dislocations
Cavalcoli D.Primo
;Matteucci G.;
1995
Abstract
The possibility to reveal the electric potential distribution arising from straight charged dislocations in silicon by means of electron holography techniques in the transmission mode is considered. Using the Read model for a charged dislocation two experimental arrangements are investigated with the line charge parallel or perpendicular to the electron beam. Although contour maps should be revealable with both set-ups, it turns out that the second case is more versatile and suitable for displaying the dislocation charge. Beam injection conditions are also discussed. © 1995 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
