We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely “Apsel 3T1 M1” and “Apsel 3T1 M2” ) was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/c at the SPS H6 CERN facility will be presented. The performances of an “Apsel 3T1” chip irradiated with a dose up to 10 MRad (Co60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies.
Titolo: | Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing |
Autore/i: | E. Paoloni; C. Avanzini; G. Batignani; S. Bettarini; F. Bosi; G. Calderini; G. Casarosa; M. Ceccanti; R. Cenci; A. Cervelli; F. Crescioli; M. Dell'Orso; F. Forti; P. Giannetti; M. A. Giorgi; A. Lusiani; S. Gregucci; P. Mammini; G. Marchiori; M. Massa; F. Morsani; N. Neri; M. Piendibene; A. Profeti; G. Rizzo; L. Sartori; J. Walsh; E. Yurtsev; M. Manghisoni; V. Re; G. Traversi; M. Bruschi; DI SIPIO, RICCARDO; GIACOBBE, BENEDETTO; GABRIELLI, ALESSANDRO; GIORGI, FILIPPO MARIA; G. Pellegrini; SBARRA, CARLA; SEMPRINI CESARI, NICOLA; SPIGHI, ROBERTO; VALENTINETTI, SARA; VILLA, MAURO; ZOCCOLI, ANTONIO; M. Citterio; V. Liberali; F. Palombo; C. Andreoli; L. Gaioni; E. Pozzati; L. Ratti; V. Speziali; D. Gamba; G. Giraudo; P. Mereu; G. F. Dalla Betta; G. Soncini; G. Fontana; M. Bomben; L. Bosisio; P. Cristaudo; G. Giacomini; D. Jugovaz; L. Lanceri; I. Rashevskaya; L. Vitale; G. Venier |
Autore/i Unibo: | |
Anno: | 2011 |
Rivista: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.nima.2010.06.325 |
Abstract: | We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely “Apsel 3T1 M1” and “Apsel 3T1 M2” ) was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/c at the SPS H6 CERN facility will be presented. The performances of an “Apsel 3T1” chip irradiated with a dose up to 10 MRad (Co60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies. |
Data prodotto definitivo in UGOV: | 2013-05-15 17:25:15 |
Appare nelle tipologie: | 1.01 Articolo in rivista |