The passivation of the rear side of silicon solar cells has become a challenging aspect in the optimization of their efficiency. One of the most promising dielectric layers used for this purpose is the Aluminum Oxide (Al2O3), but its passivation properties vary with thickness and with the deposition technique. In this work, we compare different deposition techniques. For each method the thickness of the Al2O3 layer is varied to optimize the result. Carrier lifetime is considered as the index of the passivation quality. Its extrapolation and the optical characterization of the samples are also described.
Thermal And Electrical Characterization Of Catastrophic Degradation Of Silicon Solar Cells Submitted To Reverse Current Stress / COMPAGNIN, ALESSANDRO; MENEGHINI, MATTEO; GILIBERTO, VALENTINA; BARBATO, MARCO; MARSILI, MARGHERITA; ZANONI, ENRICO; MENEGHESSO, GAUDENZIO. - STAMPA. - (2013), pp. 1826-1830. (Intervento presentato al convegno IEEE 39th Photovoltaic Specialists Conference (PVSC 2013) tenutosi a Tampa, FL, USA nel 16 - 21 June).
Thermal And Electrical Characterization Of Catastrophic Degradation Of Silicon Solar Cells Submitted To Reverse Current Stress
MARSILI, MARGHERITA;
2013
Abstract
The passivation of the rear side of silicon solar cells has become a challenging aspect in the optimization of their efficiency. One of the most promising dielectric layers used for this purpose is the Aluminum Oxide (Al2O3), but its passivation properties vary with thickness and with the deposition technique. In this work, we compare different deposition techniques. For each method the thickness of the Al2O3 layer is varied to optimize the result. Carrier lifetime is considered as the index of the passivation quality. Its extrapolation and the optical characterization of the samples are also described.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
