This work presents the nonlinear model of voltage-controlled Interdigitated Capacitors (IDCs) based on ferroelectric nanomaterials to realize tunable radiofrequency (RF) circuits. In particular, the voltage-dependent characteristic of the hafnium zirconium oxide (HfZrO), of nano-meter thickness, is exploited to implement IDCs on high-resistivity silicon substrates. These devices promise to be crucial components in various applications that need real-time reconfigurability, such as reconfigurable intelligent surfaces (RIS), emerging systems of growing interest in the 5G technology and beyond. The nonlinear model is general-purpose and is derived from measurements carried out at different frequency and biasing conditions. The model is suitable for both low-power and high-power excitations. Preliminary Harmonic Balance analyses of the device have shown high convergence capability up to 40 dBm of input power. For demonstrative purposes, the device is used for beam-steering a 2.55-GHz two-antenna array system under several power conditions: the power-dependent performance shows that at 0-dBm a 47° phase shift within a ±1 V range are obtained, while the corresponding beam steering of the main lobe is ±11°.
Nonlinear circuit model of IDCs on ferroelectric nanomaterial for reconfigurable applications / Trovarello S.; Di Florio Di Renzo A.; Aldrigo M.; Masotti D.; Dragoman M.; Costanzo A.. - ELETTRONICO. - (2022), pp. 175-178. (Intervento presentato al convegno 52nd European Microwave Conference (EuMC) tenutosi a Milano nel 25-30 Settembre 2022) [10.23919/EuMC54642.2022.9924333].
Nonlinear circuit model of IDCs on ferroelectric nanomaterial for reconfigurable applications
Trovarello S.;Di Florio Di Renzo A.;Masotti D.;Costanzo A.
2022
Abstract
This work presents the nonlinear model of voltage-controlled Interdigitated Capacitors (IDCs) based on ferroelectric nanomaterials to realize tunable radiofrequency (RF) circuits. In particular, the voltage-dependent characteristic of the hafnium zirconium oxide (HfZrO), of nano-meter thickness, is exploited to implement IDCs on high-resistivity silicon substrates. These devices promise to be crucial components in various applications that need real-time reconfigurability, such as reconfigurable intelligent surfaces (RIS), emerging systems of growing interest in the 5G technology and beyond. The nonlinear model is general-purpose and is derived from measurements carried out at different frequency and biasing conditions. The model is suitable for both low-power and high-power excitations. Preliminary Harmonic Balance analyses of the device have shown high convergence capability up to 40 dBm of input power. For demonstrative purposes, the device is used for beam-steering a 2.55-GHz two-antenna array system under several power conditions: the power-dependent performance shows that at 0-dBm a 47° phase shift within a ±1 V range are obtained, while the corresponding beam steering of the main lobe is ±11°.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
