The diffraction limit in direct-laser-writing (DLW) lithography can be circumvented by selective inhibition of the polymerization. By combining nanosecond transient absorption spectroscopy and density functional theory it is demonstrated that polymerization inhibition is possible by a direct absorption of the lowest triplet state. Polymerization inhibition by triplet state absorption (TSA) has the potential to bring DLW lithography into the nanometer scale.
Polymerization Inhibition by Triplet State Absorption for Nanoscale Lithography / Harke B; Dallari W; Grancini G; Fazzi D; Brandi F; Petrozza A; Diaspro A. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - ELETTRONICO. - 25:6(2013), pp. 904-909. [10.1002/adma.201204141]
Polymerization Inhibition by Triplet State Absorption for Nanoscale Lithography
Fazzi D;
2013
Abstract
The diffraction limit in direct-laser-writing (DLW) lithography can be circumvented by selective inhibition of the polymerization. By combining nanosecond transient absorption spectroscopy and density functional theory it is demonstrated that polymerization inhibition is possible by a direct absorption of the lowest triplet state. Polymerization inhibition by triplet state absorption (TSA) has the potential to bring DLW lithography into the nanometer scale.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
