Hybrid organic-inorganic perovskites have emerged as excellent solution-processable materials for photovoltaic applications [1]. Recently, their light emission properties have also attracted considerable attention for light-emitting devices [2,3]. Here we demonstrate CH3NH3PbI3 light emitting field-effect transistor (LE-FET), a new device concept in perovskite-based optoelectroni
Chin X.Y., Cortecchia D., Yin J., Bruno A., Soci C. (2015). CH3NH3PbI3 perovskite light emitting field-effect transistor, paper CE_12_3, 1-1.
CH3NH3PbI3 perovskite light emitting field-effect transistor
Cortecchia D.;
2015
Abstract
Hybrid organic-inorganic perovskites have emerged as excellent solution-processable materials for photovoltaic applications [1]. Recently, their light emission properties have also attracted considerable attention for light-emitting devices [2,3]. Here we demonstrate CH3NH3PbI3 light emitting field-effect transistor (LE-FET), a new device concept in perovskite-based optoelectroniFile in questo prodotto:
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