Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit-coupled SrIrO3 ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced readjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr2IrO4 opens new avenues to unconventional superconductivity by "clean" electron doping through electric field gating.

Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO3 / Schütz, P.; Di Sante, D.; Dudy, L.; Gabel, J.; Stübinger, M.; Kamp, M.; Huang, Y.; Capone, M.; Husanu, M.-A.; Strocov, V.N.; Sangiovanni, G.; Sing, M.; Claessen, R.. - In: PHYSICAL REVIEW LETTERS. - ISSN 1079-7114. - ELETTRONICO. - 119:25(2017), pp. 256404-256404. [10.1103/PhysRevLett.119.256404]

Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO3

Di Sante, D.
Secondo
Membro del Collaboration Group
;
2017

Abstract

Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit-coupled SrIrO3 ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced readjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr2IrO4 opens new avenues to unconventional superconductivity by "clean" electron doping through electric field gating.
2017
Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO3 / Schütz, P.; Di Sante, D.; Dudy, L.; Gabel, J.; Stübinger, M.; Kamp, M.; Huang, Y.; Capone, M.; Husanu, M.-A.; Strocov, V.N.; Sangiovanni, G.; Sing, M.; Claessen, R.. - In: PHYSICAL REVIEW LETTERS. - ISSN 1079-7114. - ELETTRONICO. - 119:25(2017), pp. 256404-256404. [10.1103/PhysRevLett.119.256404]
Schütz, P.; Di Sante, D.; Dudy, L.; Gabel, J.; Stübinger, M.; Kamp, M.; Huang, Y.; Capone, M.; Husanu, M.-A.; Strocov, V.N.; Sangiovanni, G.; Sing, M.; Claessen, R.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/892820
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