A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected. The combined analysis of theoretical and experimental Raman spectra recorded in solution indicates that at room temperature a dynamical equilibrium, characterized by interconversion between the two more stable conformers (namely trans and cis), takes place and that the more populated species is the cis form. Referring to the solid phase instead, Raman spectra of single-crystal samples show the presence of the only trans conformer, as confirmed by X-ray measurements. Finally, Raman spectra of thin films, as those used for the memory device, were collected; samples just deposited from solution and after few hours from the deposition were analyzed. Following the evolution of selective spectroscopic Raman markers, an isomerization process from the abundant cis (as-deposited) to the totally trans (after few hours) conformer in the solid phase was detected. These results open the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device.

D. Fazzi, E. V. Canesi, C. Bertarelli, C. Castiglioni, F. Negri, G. Zerbi (2010). Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories. JOURNAL OF RAMAN SPECTROSCOPY, 41, 406-413 [10.1002/jrs.2449].

Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories

D. Fazzi;NEGRI, FABRIZIA;
2010

Abstract

A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected. The combined analysis of theoretical and experimental Raman spectra recorded in solution indicates that at room temperature a dynamical equilibrium, characterized by interconversion between the two more stable conformers (namely trans and cis), takes place and that the more populated species is the cis form. Referring to the solid phase instead, Raman spectra of single-crystal samples show the presence of the only trans conformer, as confirmed by X-ray measurements. Finally, Raman spectra of thin films, as those used for the memory device, were collected; samples just deposited from solution and after few hours from the deposition were analyzed. Following the evolution of selective spectroscopic Raman markers, an isomerization process from the abundant cis (as-deposited) to the totally trans (after few hours) conformer in the solid phase was detected. These results open the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device.
2010
D. Fazzi, E. V. Canesi, C. Bertarelli, C. Castiglioni, F. Negri, G. Zerbi (2010). Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories. JOURNAL OF RAMAN SPECTROSCOPY, 41, 406-413 [10.1002/jrs.2449].
D. Fazzi; E. V. Canesi; C. Bertarelli; C. Castiglioni; F. Negri; G. Zerbi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/88771
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