The paper presents a new approach to the distributed modeling of high frequency transistors suitable for CAD applications. In particular, electromagnetic simulation is adopted to characterize the extrinsic part of the electron device in terms of a multi-port scattering matrix without introducing approximations based on lumped components. Experimental and simulation results for 0.5 μm GaAs MESFETs with different gate widths preliminary confirm the consistency of the proposed approach.
Cidronali A., Collodi G., Santarelli A., Vannini G., Manes G. (1998). Small-signal distributed FET modeling through electromagnetic analysis of the extrinsic structure. Piscataway, NJ, United States : IEEE [10.1109/MWSYM.1998.689376].
Small-signal distributed FET modeling through electromagnetic analysis of the extrinsic structure
Santarelli A.;
1998
Abstract
The paper presents a new approach to the distributed modeling of high frequency transistors suitable for CAD applications. In particular, electromagnetic simulation is adopted to characterize the extrinsic part of the electron device in terms of a multi-port scattering matrix without introducing approximations based on lumped components. Experimental and simulation results for 0.5 μm GaAs MESFETs with different gate widths preliminary confirm the consistency of the proposed approach.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
