A previously proposed look-up-Table based mathematical approach for the modeling of microwave active devices, the Nonlinear Integral Model, is applied for the prediction of intermodulation distortion (IMD) in GaAs MESFETs. Theoretical considerations and experimental results show that the intermodulationcharacteristics of GaAs MESFETs can be predicted with excellent accuracy by using the proposed model together with suitable electron-device-oriented interpolation techniques, directly on the bases of conventional measuremerts (DC characteristics and bias/frequency dependent small-signal S-parameters).
Accurate prediction of intermodulation distortion in GaAs MESFETs / Filicori F.; Vannini G.; Santarelli A.; Torcolacci D.; Monaco V.A.. - ELETTRONICO. - 2:(1995), pp. 4137250.625-4137250.629. (Intervento presentato al convegno 25th European Microwave Conference, EuMC 1995 tenutosi a ita nel 1995) [10.1109/EUMA.1995.337036].
Accurate prediction of intermodulation distortion in GaAs MESFETs
Filicori F.;Santarelli A.;
1995
Abstract
A previously proposed look-up-Table based mathematical approach for the modeling of microwave active devices, the Nonlinear Integral Model, is applied for the prediction of intermodulation distortion (IMD) in GaAs MESFETs. Theoretical considerations and experimental results show that the intermodulationcharacteristics of GaAs MESFETs can be predicted with excellent accuracy by using the proposed model together with suitable electron-device-oriented interpolation techniques, directly on the bases of conventional measuremerts (DC characteristics and bias/frequency dependent small-signal S-parameters).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
