A teclinology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the nonlinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach. © 1997 IEEE.
A finite-memory nonlinear model for microwave electron devices / Filicori F.; Vaisnini G.; Santarelli A.. - ELETTRONICO. - 1:(1997), pp. 4138876.422-4138876.427. (Intervento presentato al convegno 1997 27th European Microwave Conference, EuMC 1997 tenutosi a Jerusalem, isr nel 1997) [10.1109/EUMA.1997.337835].
A finite-memory nonlinear model for microwave electron devices
Filicori F.;Santarelli A.
1997
Abstract
A teclinology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the nonlinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach. © 1997 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
