A new approach that takes into account both traps and thermal phenomena is proposed for the accurate modeling of deviations between static and dynamic drain current characteristics in III-V FETs. The model is based on the backgating concept. The model is experimentally verified through comparisons between stimulated and measured pulsed drain current characteristics.
Backgating model including self-heating for III-V FETs / Filicori F.; Santarelli A.; Vannini G.; Monaco V.A.. - In: MICROWAVE ENGINEERING EUROPE. - ISSN 0960-667X. - STAMPA. - Apr:(1999), pp. 43-50.
Backgating model including self-heating for III-V FETs
Filicori F.;Santarelli A.;Monaco V. A.
1999
Abstract
A new approach that takes into account both traps and thermal phenomena is proposed for the accurate modeling of deviations between static and dynamic drain current characteristics in III-V FETs. The model is based on the backgating concept. The model is experimentally verified through comparisons between stimulated and measured pulsed drain current characteristics.File in questo prodotto:
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