A new approach that takes into account both traps and thermal phenomena is proposed for the accurate modeling of deviations between static and dynamic drain current characteristics in III-V FETs. The model is based on the backgating concept. The model is experimentally verified through comparisons between stimulated and measured pulsed drain current characteristics.
Filicori F., Santarelli A., Vannini G., Monaco V.A. (1999). Backgating model including self-heating for III-V FETs. MICROWAVE ENGINEERING EUROPE, Apr, 43-50.
Backgating model including self-heating for III-V FETs
Filicori F.;Santarelli A.;Monaco V. A.
1999
Abstract
A new approach that takes into account both traps and thermal phenomena is proposed for the accurate modeling of deviations between static and dynamic drain current characteristics in III-V FETs. The model is based on the backgating concept. The model is experimentally verified through comparisons between stimulated and measured pulsed drain current characteristics.File in questo prodotto:
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