The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

Giant Rashba Splitting in Pb1–xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

Di Sante, D.;
2017

Abstract

The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
Volobuev, V.V.; Mandal, P.S.; Galicka, M.; Caha, O.; Sánchez-Barriga, J.; Di Sante, D.; Varykhalov, A.; Khiar, A.; Picozzi, S.; Bauer, G.; Kacman, P.; Buczko, R.; Rader, O.; Springholz, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/874724
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