Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a semiconductor featuring topologically nontrivial properties, such as SnTe, merges the intriguing field of spin-orbit-driven physics with nonvolatile functionalities appealing for spintronics. By using a variety of modeling techniques, we show that a strikingly rich sequence of phases can be induced in SnTe, when going from a room-temperature cubic phase to a low-temperature ferroelectric structure, ranging from a topological crystalline insulator to a time-reversal-invariant Z2 topological insulator to a “ferroelectric Rashba semiconductor,” exhibiting a huge electrically controllable Rashba effect in the bulk band structure.

Engineering relativistic effects in ferroelectric SnTe

Di Sante, D.
Penultimo
;
2014

Abstract

Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a semiconductor featuring topologically nontrivial properties, such as SnTe, merges the intriguing field of spin-orbit-driven physics with nonvolatile functionalities appealing for spintronics. By using a variety of modeling techniques, we show that a strikingly rich sequence of phases can be induced in SnTe, when going from a room-temperature cubic phase to a low-temperature ferroelectric structure, ranging from a topological crystalline insulator to a time-reversal-invariant Z2 topological insulator to a “ferroelectric Rashba semiconductor,” exhibiting a huge electrically controllable Rashba effect in the bulk band structure.
Plekhanov, E.; Barone, P.; Di Sante, D.; Picozzi, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/874684
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