Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results confirm that these phenomena must be taken into account for a reliable simulation in the millimetre-wave range and also that a simple small signal compact model with excellent scalability can accurately account for these phenomena. A full bias-dependent compact model which can be easily converted into a large-signal model compatible with most nonlinear simulators is also presented.
Experimental Research into Non-Quasi-Static Phenomena in Monolithic pHEMT Devices / T.M. Martín-Guerrero; A. Santarelli; C. Camacho-Peñalosa. - STAMPA. - (2009), pp. 1800-1803. (Intervento presentato al convegno European Microwave Week 2009 - EuMW09 tenutosi a Rome, Italy nel 28 Sep - 2 Oct, 2009) [10.1109/EUMC.2009.5296216].
Experimental Research into Non-Quasi-Static Phenomena in Monolithic pHEMT Devices
SANTARELLI, ALBERTO;
2009
Abstract
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results confirm that these phenomena must be taken into account for a reliable simulation in the millimetre-wave range and also that a simple small signal compact model with excellent scalability can accurately account for these phenomena. A full bias-dependent compact model which can be easily converted into a large-signal model compatible with most nonlinear simulators is also presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
