We report a phosphine-free colloidal synthesis of CuInxGa 1-xS2 (CIGS) nanocrystals (NCs) by heating a mixture of metal salts, elemental sulfur, octadecene, and oleylamine. In contrast with the more commonly used hot injection, this procedure is highly suitable for large-scale NC production, which we tested by performing a gram-scale synthesis. The composition of the CIGS NCs could be tuned by varying the In and Ga precursor ratios, and the samples showed a composition-dependent band gap energy. The average particle size was scaled from 13 to 19 nm by increasing the reaction temperature from 230 to 270 C. Two concomitant growth mechanisms took place: in one, covellite (CuS) NCs nucleated already at room temperature and then incorporated increasing amounts of In and Ga until they evolved into chalcopyrite CIGS NCs. In the second mechanism, CIGS NCs directly nucleated at intermediate temperatures. They were smaller than the NCs formed by the first mechanism, but richer in In and Ga. In the final sample, obtained by prolonged heating at 230-270 C, all NCs were homogeneous in size and composition. Attempts to replace the native ligands on the surface of the NCs with sulfur ions (following literature procedures) resulted in only around 50% exchange. Films prepared using the partially ligand exchanged NCs exhibited good homogeneity and an ohmic dark conductivity and photoconductivity with a resistivity of about 50 Ω·cm. © 2013 American Chemical Society.
Dilena E., Xie Y., Brescia R., Prato M., Maserati L., Krahne R., et al. (2013). CuInxGa1-xS2 nanocrystals with tunable composition and band gap synthesized via a phosphine-free and scalable procedure. CHEMISTRY OF MATERIALS, 25(15), 3180-3187 [10.1021/cm401563u].
CuInxGa1-xS2 nanocrystals with tunable composition and band gap synthesized via a phosphine-free and scalable procedure
Xie Y.;Maserati L.;
2013
Abstract
We report a phosphine-free colloidal synthesis of CuInxGa 1-xS2 (CIGS) nanocrystals (NCs) by heating a mixture of metal salts, elemental sulfur, octadecene, and oleylamine. In contrast with the more commonly used hot injection, this procedure is highly suitable for large-scale NC production, which we tested by performing a gram-scale synthesis. The composition of the CIGS NCs could be tuned by varying the In and Ga precursor ratios, and the samples showed a composition-dependent band gap energy. The average particle size was scaled from 13 to 19 nm by increasing the reaction temperature from 230 to 270 C. Two concomitant growth mechanisms took place: in one, covellite (CuS) NCs nucleated already at room temperature and then incorporated increasing amounts of In and Ga until they evolved into chalcopyrite CIGS NCs. In the second mechanism, CIGS NCs directly nucleated at intermediate temperatures. They were smaller than the NCs formed by the first mechanism, but richer in In and Ga. In the final sample, obtained by prolonged heating at 230-270 C, all NCs were homogeneous in size and composition. Attempts to replace the native ligands on the surface of the NCs with sulfur ions (following literature procedures) resulted in only around 50% exchange. Films prepared using the partially ligand exchanged NCs exhibited good homogeneity and an ohmic dark conductivity and photoconductivity with a resistivity of about 50 Ω·cm. © 2013 American Chemical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
