Design of materials with special properties benefits from establishing deep structural and electronic analogies between emerging and existing materials. The Zintl anion [Al2Si2]2−is both isostructural and isoelectronic to bilayer silicene; it thus makes a promising building block to assemble electronic materials. Here, we show that nanoscale films of SrAl2Si2, a semimetal formed by alternating [Al2Si2] and Sr layers, exhibit a high carrier mobility, exceeding 10 000 cm2V−1s−1. The dominant role of the anionic bilayers in the electronic structure and transport properties is established by band structure calculations. To synthesize monocrystalline epitaxial films of SrAl2Si2with atomically sharp interfaces, a general two-step route involving a sacrificial 2D template is devised. A distinct advantage of the films is their natural integration with silicon technology. The results establish a platform for engineering layered ionic nanomaterials.

Nanoscale synthesis of ionic analogues of bilayer silicene with high carrier mobility

Di Sante D.;Franchini C.
Supervision
;
2021

Abstract

Design of materials with special properties benefits from establishing deep structural and electronic analogies between emerging and existing materials. The Zintl anion [Al2Si2]2−is both isostructural and isoelectronic to bilayer silicene; it thus makes a promising building block to assemble electronic materials. Here, we show that nanoscale films of SrAl2Si2, a semimetal formed by alternating [Al2Si2] and Sr layers, exhibit a high carrier mobility, exceeding 10 000 cm2V−1s−1. The dominant role of the anionic bilayers in the electronic structure and transport properties is established by band structure calculations. To synthesize monocrystalline epitaxial films of SrAl2Si2with atomically sharp interfaces, a general two-step route involving a sacrificial 2D template is devised. A distinct advantage of the films is their natural integration with silicon technology. The results establish a platform for engineering layered ionic nanomaterials.
Averyanov D.V.; Liu P.; Sokolov I.S.; Parfenov O.E.; Karateev I.A.; Di Sante D.; Franchini C.; Tokmachev A.M.; Storchak V.G.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/854870
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