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EnglishCurrent and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0 deg off the {111} axis and some off the {100} axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes. A degradation of the energy and risetime resolution of about a factor 3 with respect to the measured optimal values (for example 7deg off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0deg cut detectors. For Pulse Shape Analysis applications, the necessity of using such ‘‘random’’ oriented silicon detectors is demonstrated.
| Titolo: | Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors | |
| Autore/i: | L. Bardelli; M. Bini; G. Casini; G. Pasquali; G. Poggi; S. Barlini; A. Becla; R. Berjillos; B. Borderie; R. Bougault; BRUNO, MAURO; M. Cinausero; D'AGOSTINO, MICHELA; DE SANCTIS, JACOPO; J. A. Duenas; P. Edelbruck; GERACI, ELENA IRENE; F. Gramegna; A. Kordyasz; T. Kozik; KRAVCHUK, VLADIMIR; L. Lavergne; MARINI, PAOLA; A. Nannini; F. Negoita; A. Olmi; A. Ordine; S. Piantelli; E. Rauly; M. F. Rivet; E. Rosato; C. Scian; A. A. Stefanini; VANNINI, GIANNI; S. Velica; M. Vigilante | |
| Autore/i Unibo: | ||
| Anno: | 2009 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.nima.2009.03.247 | |
| Abstract: | Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0 deg off the {111} axis and some off the {100} axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes. A degradation of the energy and risetime resolution of about a factor 3 with respect to the measured optimal values (for example 7deg off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0deg cut detectors. For Pulse Shape Analysis applications, the necessity of using such ‘‘random’’ oriented silicon detectors is demonstrated. | |
| Data prodotto definitivo in UGOV: | 2010-02-26 10:53:05 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/85176
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