We have investigated theoretically the inception mechanism and growth of the damage inside the insulation system of a polymeric cable under working conditions. We focused, in particular, our attention on damage originating from microscopic defects such as voids. In order to clarify the implications of these defects for cable failure, we have developed a theoretical model based on the theory of electrical avalanche solving numerically its basic equations. Calculations of the ionization rates of atmospheric gas filling the voids are done as a function of the applied electric stress and void dimensions. Estimates of the energy release and local damage in polyethylene produced by the resulting hot-electron discharge are given. The developed physical model of damage growth compares reasonably well with known experimental data.
S. Serra, G.C. Montanari, G. Mazzanti (2005). Theory of inception mechanism and growth of defect-induced damage in polyethylene cable insulation. JOURNAL OF APPLIED PHYSICS, 98(3), 034102.1-034102.15 [10.1063/1.1978986].
Theory of inception mechanism and growth of defect-induced damage in polyethylene cable insulation
MONTANARI, GIAN CARLO;MAZZANTI, GIOVANNI
2005
Abstract
We have investigated theoretically the inception mechanism and growth of the damage inside the insulation system of a polymeric cable under working conditions. We focused, in particular, our attention on damage originating from microscopic defects such as voids. In order to clarify the implications of these defects for cable failure, we have developed a theoretical model based on the theory of electrical avalanche solving numerically its basic equations. Calculations of the ionization rates of atmospheric gas filling the voids are done as a function of the applied electric stress and void dimensions. Estimates of the energy release and local damage in polyethylene produced by the resulting hot-electron discharge are given. The developed physical model of damage growth compares reasonably well with known experimental data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.