We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that the low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs. This journal is

Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors / Salzillo T.; Montes N.; Pfattner R.; Mas-Torrent M.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7534. - ELETTRONICO. - 8:43(2020), pp. 15361-15367. [10.1039/d0tc03222k]

Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

Salzillo T.
Primo
;
2020

Abstract

We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that the low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs. This journal is
2020
Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors / Salzillo T.; Montes N.; Pfattner R.; Mas-Torrent M.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7534. - ELETTRONICO. - 8:43(2020), pp. 15361-15367. [10.1039/d0tc03222k]
Salzillo T.; Montes N.; Pfattner R.; Mas-Torrent M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/847612
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