This paper gives an overview on the development of microwave phototransistors within SiGe Bipolar and BiCMOS technologies. The physics and design of SiGe/Si Heterojunction Bipolar Phototransistors (HPT) are covered. A comprehensive analysis of the photodetection mechanisms and its localization into the structure is provided. After a description of the scaling rules, applications are presented in the field of Microwave-Photonics for short range and low-cost applications. Perspectives are then highlighted that includes the frequency increase, the enlargement of functionality and even on-chip optical links.
Tegegne Z.G., Rosales M.D., Peressutti F., Laheurte J.-M., Algani C., Nanni J., et al. (2020). SiGe Microwave Phototransistors for Microwave-Photonics Applications. 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/BCICTS48439.2020.9392985].
SiGe Microwave Phototransistors for Microwave-Photonics Applications
Nanni J.;Tartarini G.;
2020
Abstract
This paper gives an overview on the development of microwave phototransistors within SiGe Bipolar and BiCMOS technologies. The physics and design of SiGe/Si Heterojunction Bipolar Phototransistors (HPT) are covered. A comprehensive analysis of the photodetection mechanisms and its localization into the structure is provided. After a description of the scaling rules, applications are presented in the field of Microwave-Photonics for short range and low-cost applications. Perspectives are then highlighted that includes the frequency increase, the enlargement of functionality and even on-chip optical links.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
