The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.
Formation and incorporation of SiF4 molecules in F - implanted preamorphized crystalline silicon / D. De Salvador; G. Bisognin; E. Napolitani; M. Mastromatteo; N. Baggio; A. Carnera; F. Boscherini; G. Impellizzeri; S. Mirabella; S. Boninelli; F. Priolo; F. Cristiano. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 95:(2009), pp. 101908-101911. [10.1063/1.3216806]
Formation and incorporation of SiF4 molecules in F - implanted preamorphized crystalline silicon
BOSCHERINI, FEDERICO;
2009
Abstract
The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
