The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.
D. De Salvador, G. Bisognin, E. Napolitani, M. Mastromatteo, N. Baggio, A. Carnera, et al. (2009). Formation and incorporation of SiF4 molecules in F - implanted preamorphized crystalline silicon. APPLIED PHYSICS LETTERS, 95, 101908-101911 [10.1063/1.3216806].
Formation and incorporation of SiF4 molecules in F - implanted preamorphized crystalline silicon
BOSCHERINI, FEDERICO;
2009
Abstract
The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.