We propose to extend the present research project for another year in order to achieve a more definite assessment of the effectiveness of ion irradiation in reducing the degradation of the device performance caused by the exposure to atmosphere. We plan to focus on the following issues: - monitor the evolution with time, on a time scale of a few months, of both the macroscopic transport parameters (mobility and threshold voltage) and the excited electronic states distribution and energy structure of irradiated OFETs - complete the process of characterizing the structural and electrical properties of sexithiophene OFETs that have been already irradiated with N ions and compare the results with those from pentacene irradiated OFETs; the promising preliminary results suggest that it is possible to use ion irradiation on different organic molecules to achieve a controlled surface modification. - further extend the applicability of the process to different ion species by irradiating another batch of pentacene OFETs with a different ion (Ne), that is neutral within the organic matrix. Infact, the presence of implanted N ions in organic layers could induce the formation of -CN terminations on the aromatic rings. This termination is highly electronegative and could affect the material polarizability and electrical behaviour thus offering an additional degree of control in the modification of the organic thin film transport properties. - refine the investigation of the observed strong modification of the electrical conductivity of the ion irradiated surface layer. We have observed how the dehydrogenation and carbonification processes induced by ion irradiation increase the conductivity of the damaged layer of a few orders of magnitude, possibly by modifying the -orbital stacking of the aromatic rings. We propose to investigate the physical origin of this effect in order to exploit it as a standard device fabrication process.

Ion implantation in organic thin film transistors

FRABONI, BEATRICE
2009

Abstract

We propose to extend the present research project for another year in order to achieve a more definite assessment of the effectiveness of ion irradiation in reducing the degradation of the device performance caused by the exposure to atmosphere. We plan to focus on the following issues: - monitor the evolution with time, on a time scale of a few months, of both the macroscopic transport parameters (mobility and threshold voltage) and the excited electronic states distribution and energy structure of irradiated OFETs - complete the process of characterizing the structural and electrical properties of sexithiophene OFETs that have been already irradiated with N ions and compare the results with those from pentacene irradiated OFETs; the promising preliminary results suggest that it is possible to use ion irradiation on different organic molecules to achieve a controlled surface modification. - further extend the applicability of the process to different ion species by irradiating another batch of pentacene OFETs with a different ion (Ne), that is neutral within the organic matrix. Infact, the presence of implanted N ions in organic layers could induce the formation of -CN terminations on the aromatic rings. This termination is highly electronegative and could affect the material polarizability and electrical behaviour thus offering an additional degree of control in the modification of the organic thin film transport properties. - refine the investigation of the observed strong modification of the electrical conductivity of the ion irradiated surface layer. We have observed how the dehydrogenation and carbonification processes induced by ion irradiation increase the conductivity of the damaged layer of a few orders of magnitude, possibly by modifying the -orbital stacking of the aromatic rings. We propose to investigate the physical origin of this effect in order to exploit it as a standard device fabrication process.
2009
B.Fraboni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/83538
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