There is considerable interest in new solid-state materials for many applications, from energy storage to electronics and neuromorphic computing. This concept paper highlights how pseudocapacitive and ion-insertion materials, for their inherent capability of storing charge and modulate electron conduction, represent a bridge between energy storage, electronics and neuromorphic computing and enable the design of new device architectures.

Mastragostino, M., Soavi, F. (2021). Pseudocapacitive and Ion‐Insertion Materials: A Bridge between Energy Storage, Electronics and Neuromorphic Computing. CHEMELECTROCHEM, 8(14), 2630-2633 [10.1002/celc.202100457].

Pseudocapacitive and Ion‐Insertion Materials: A Bridge between Energy Storage, Electronics and Neuromorphic Computing

Soavi, Francesca
2021

Abstract

There is considerable interest in new solid-state materials for many applications, from energy storage to electronics and neuromorphic computing. This concept paper highlights how pseudocapacitive and ion-insertion materials, for their inherent capability of storing charge and modulate electron conduction, represent a bridge between energy storage, electronics and neuromorphic computing and enable the design of new device architectures.
2021
Mastragostino, M., Soavi, F. (2021). Pseudocapacitive and Ion‐Insertion Materials: A Bridge between Energy Storage, Electronics and Neuromorphic Computing. CHEMELECTROCHEM, 8(14), 2630-2633 [10.1002/celc.202100457].
Mastragostino, Marina; Soavi, Francesca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/830491
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