There is considerable interest in new solid-state materials for many applications, from energy storage to electronics and neuromorphic computing. This concept paper highlights how pseudocapacitive and ion-insertion materials, for their inherent capability of storing charge and modulate electron conduction, represent a bridge between energy storage, electronics and neuromorphic computing and enable the design of new device architectures.
Pseudocapacitive and Ion‐Insertion Materials: A Bridge between Energy Storage, Electronics and Neuromorphic Computing / Mastragostino, Marina; Soavi, Francesca. - In: CHEMELECTROCHEM. - ISSN 2196-0216. - ELETTRONICO. - 8:14(2021), pp. 2630-2633. [10.1002/celc.202100457]
Pseudocapacitive and Ion‐Insertion Materials: A Bridge between Energy Storage, Electronics and Neuromorphic Computing
Soavi, Francesca
2021
Abstract
There is considerable interest in new solid-state materials for many applications, from energy storage to electronics and neuromorphic computing. This concept paper highlights how pseudocapacitive and ion-insertion materials, for their inherent capability of storing charge and modulate electron conduction, represent a bridge between energy storage, electronics and neuromorphic computing and enable the design of new device architectures.File | Dimensione | Formato | |
---|---|---|---|
2121_ChemElectroChem_8_2630.pdf
accesso aperto
Tipo:
Versione (PDF) editoriale
Licenza:
Creative commons
Dimensione
868.76 kB
Formato
Adobe PDF
|
868.76 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.