In this talk I will report on nanotechnological strategies to fabricate electronic devices based on guanosines and guanosine-oligothiophenes complexes. Self assembled mono layers were produced by physisorption or chemisorption by cast deposition and slow solvent evaporation. Guanosine molecules were modified in order to promote their stable chemical anchoring onto gold or silicon surfaces. Molecular self assembled monolayers were tested by Atomic force microscopy and scanning force spectroscopy in order to check the ordering and aggregation properties of immobilized guanosines. Scanning tunneling spectroscopy in UHV were performed in order to map the electronic configuration and/or modification of guanosines and guanosine-complexes deposited onto conductive surfaces. On the base of these results both bare molecules and gold nanoparticles covered by guanosine ribbons were produced and trapped inside interdigitated electrodes and mesa junctions for I/V measurements and device formance testing.
R. Rinaldi, V. Arima, G. Maruccio, R. Cingolani, G. P. Spada (2009). GUANOSINE BASED NANODEVICES. s.l : s.n.
GUANOSINE BASED NANODEVICES
SPADA, GIAN PIERO
2009
Abstract
In this talk I will report on nanotechnological strategies to fabricate electronic devices based on guanosines and guanosine-oligothiophenes complexes. Self assembled mono layers were produced by physisorption or chemisorption by cast deposition and slow solvent evaporation. Guanosine molecules were modified in order to promote their stable chemical anchoring onto gold or silicon surfaces. Molecular self assembled monolayers were tested by Atomic force microscopy and scanning force spectroscopy in order to check the ordering and aggregation properties of immobilized guanosines. Scanning tunneling spectroscopy in UHV were performed in order to map the electronic configuration and/or modification of guanosines and guanosine-complexes deposited onto conductive surfaces. On the base of these results both bare molecules and gold nanoparticles covered by guanosine ribbons were produced and trapped inside interdigitated electrodes and mesa junctions for I/V measurements and device formance testing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.