We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-principles molecular dynamics. We discuss the interface with vacuum, and the role played by surface reconstruction in SiC homoepitaxy, and adatom diffusion. Then we move to the description of a buried, highly mismatched semiconductor interface, the one which occurs between SiC and Si, its natural substrate for growth: in this case, the mechanism governing the creation of a network of dislocations at the SiC/Si interface is presented, along with a microscopic description of the dislocation core. Finally, we describe a template solid/liquid interface, water on SiC: based on the predicted structure of SiC surfaces covered with water molecules, we propose (i) a way of nanopatterning cubic SiC(001) for the attachment of biomolecules and (ii) experiments to reveal the local geometry of adsorbed water.

Catellani, A., Cicero, G., Righi, M.C., Pignedoli, C.A. (2005). First principles simulations of SiC-based interfaces. Trans Tech Publications Ltd [10.4028/www.scientific.net/MSF.483-485.541].

First principles simulations of SiC-based interfaces

RIGHI, Maria Clelia;
2005

Abstract

We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-principles molecular dynamics. We discuss the interface with vacuum, and the role played by surface reconstruction in SiC homoepitaxy, and adatom diffusion. Then we move to the description of a buried, highly mismatched semiconductor interface, the one which occurs between SiC and Si, its natural substrate for growth: in this case, the mechanism governing the creation of a network of dislocations at the SiC/Si interface is presented, along with a microscopic description of the dislocation core. Finally, we describe a template solid/liquid interface, water on SiC: based on the predicted structure of SiC surfaces covered with water molecules, we propose (i) a way of nanopatterning cubic SiC(001) for the attachment of biomolecules and (ii) experiments to reveal the local geometry of adsorbed water.
2005
SILICON CARBIDE AND RELATED MATERIALS 2004
541
546
Catellani, A., Cicero, G., Righi, M.C., Pignedoli, C.A. (2005). First principles simulations of SiC-based interfaces. Trans Tech Publications Ltd [10.4028/www.scientific.net/MSF.483-485.541].
Catellani, A; Cicero, G.; Righi, Maria Clelia; Pignedoli, Carlo Antonio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/780096
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