We investigate the potential energy surface (PES) and the adsorption properties of an In adatom on InAs (2×4) reconstructed wetting layers (WLs) deposited on a GaAs substrate. The results are then used to derive the diffusion properties of a single In adatom on the WLs. We find that: (i) the adsorbate diffusion is highly anisotropic; (ii) the adsorption sites within the As dimers have to be taken into account since they strongly affect diffusion; (iii) the most stable adsorption sites are the ones within the dimers and those located besides the in-dimers. © 2009 American Institute of Physics.
Rosini, M., Righi, M.C., Kratzer, P., Magri, R. (2010). In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) [10.1063/1.3295378].
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001)
RIGHI, Maria Clelia
;
2010
Abstract
We investigate the potential energy surface (PES) and the adsorption properties of an In adatom on InAs (2×4) reconstructed wetting layers (WLs) deposited on a GaAs substrate. The results are then used to derive the diffusion properties of a single In adatom on the WLs. We find that: (i) the adsorbate diffusion is highly anisotropic; (ii) the adsorption sites within the As dimers have to be taken into account since they strongly affect diffusion; (iii) the most stable adsorption sites are the ones within the dimers and those located besides the in-dimers. © 2009 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
