An ab initio simulation study of SiC homoepitaxial growth is presented. It is shown that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. It is observed that the energy gain upon surface stability can induce the reorganization of the deposited material into the crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces.
Righi, M.C., Pignedoli, C.A., Di Felice, R., Bertoni, C.M., Catellani, A. (2003). Ab initio Simulations of Homoepitaxial SiC Growth. PHYSICAL REVIEW LETTERS, 91, 1361011-1361014 [10.1103/PhysRevLett.91.136101].
Ab initio Simulations of Homoepitaxial SiC Growth
RIGHI, Maria Clelia
;
2003
Abstract
An ab initio simulation study of SiC homoepitaxial growth is presented. It is shown that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. It is observed that the energy gain upon surface stability can induce the reorganization of the deposited material into the crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
