In this paper, we propose a rectenna based on a graphene self-switching diode for Ka band applications in view of the upcoming 5G and internet-of-things telecommunication systems. A 4-element patch antenna array has been designed, simulated, and fabricated using a high-resistivity silicon/silicon dioxide/graphene multi-layer and tested on-wafer. By using analytical formulas to optimize the number of parallel channels for the diode, we have achieved highly improved DC current values (average value of ±2mA at ±3V). The diode has been integrated with the array in coplanar waveguide technology using a matching open stub, in order to maximize the array-to-diode power transfer. The rectenna has then been measured by using a 28GHz RF source: at 0V DC bias, a maximum DC voltage VDC of 2.4mV has been obtained, with a maximum DC current IDC of 1.2μA and a maximum DC power PDC of 2.9nW; when applying a small DC bias (1.2V), VDC reaches 71mV, IDC=35.5μA and PDC=2.5μW.
Aldrigo, M., Dragoman, M., Iordanescu, S., Vasilache, D., Dinescu, A., Shanawani, M., et al. (2019). Graphene diodes for 5G energy harvesting: Design, simulations and experiments. New York (NJ) : Institute of Electrical and Electronics Engineers Inc. [10.23919/EuMC.2019.8910802].
Graphene diodes for 5G energy harvesting: Design, simulations and experiments
Shanawani M.;Masotti D.
2019
Abstract
In this paper, we propose a rectenna based on a graphene self-switching diode for Ka band applications in view of the upcoming 5G and internet-of-things telecommunication systems. A 4-element patch antenna array has been designed, simulated, and fabricated using a high-resistivity silicon/silicon dioxide/graphene multi-layer and tested on-wafer. By using analytical formulas to optimize the number of parallel channels for the diode, we have achieved highly improved DC current values (average value of ±2mA at ±3V). The diode has been integrated with the array in coplanar waveguide technology using a matching open stub, in order to maximize the array-to-diode power transfer. The rectenna has then been measured by using a 28GHz RF source: at 0V DC bias, a maximum DC voltage VDC of 2.4mV has been obtained, with a maximum DC current IDC of 1.2μA and a maximum DC power PDC of 2.9nW; when applying a small DC bias (1.2V), VDC reaches 71mV, IDC=35.5μA and PDC=2.5μW.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
