This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).

Substrate resistivity influence on silicon–germanium phototransistor performance

Nanni J.;Tartarini G.;
2019

Abstract

This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).
2019
Tegegne Z.G.; Nanni J.; Viana C.; Tartarini G.; Polleux J.-L.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/689382
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