This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).
Tegegne Z.G., Nanni J., Viana C., Tartarini G., Polleux J.-L. (2019). Substrate resistivity influence on silicon–germanium phototransistor performance. ELECTRONICS LETTERS, 55(11), 656-658 [10.1049/el.2019.0203].
Substrate resistivity influence on silicon–germanium phototransistor performance
Nanni J.;Tartarini G.;
2019
Abstract
This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
