We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.
Benvenuti, E., Gentili, D., Chiarella, F., Portone, A., Barra, M., Cecchini, M., et al. (2018). Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods. JOURNAL OF MATERIALS CHEMISTRY. C, 6(21), 5601-5608 [10.1039/c8tc00544c].
Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods
BENVENUTI, EMILIA
;Cappuccino, Chiara;Salzillo, Tommaso;Venuti, Elisabetta;Maini, Lucia;
2018
Abstract
We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.File | Dimensione | Formato | |
---|---|---|---|
660388_postprint.pdf
accesso aperto
Tipo:
Postprint
Licenza:
Licenza per accesso libero gratuito
Dimensione
2.41 MB
Formato
Adobe PDF
|
2.41 MB | Adobe PDF | Visualizza/Apri |
660388_SI.pdf
accesso riservato
Tipo:
File Supplementare
Licenza:
Licenza per accesso riservato
Dimensione
469.63 kB
Formato
Adobe PDF
|
469.63 kB | Adobe PDF | Visualizza/Apri Contatta l'autore |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.