We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.

Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

BENVENUTI, EMILIA
;
Cappuccino, Chiara;Salzillo, Tommaso;Venuti, Elisabetta;Maini, Lucia;
2018

Abstract

We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.
2018
Benvenuti, Emilia*; Gentili, Denis; Chiarella, Fabio; Portone, Alberto; Barra, Mario; Cecchini, Marco; Cappuccino, Chiara; Zambianchi, Massimo; Lopez, Sergio G.; Salzillo, Tommaso; Venuti, Elisabetta; Cassinese, Antonio; Pisignano, Dario; Persano, Luana; Cavallini, Massimiliano; Maini, Lucia; Melucci, Manuela; Muccini, Michele; Toffanin, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/660388
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