This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on firstgeneration current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.
Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors / Crescentini, Marco; Tamburini, Cinzia; Belsito, Luca; Romani, Aldo; Roncaglia, Alberto; Tartagni, Marco. - In: PROCEEDINGS. - ISSN 2504-3900. - ELETTRONICO. - 2:13(2018), pp. 973.1-973.5. (Intervento presentato al convegno Eurosensors 2018 tenutosi a Graz, AUstria nel 2018) [10.3390/proceedings2130973].
Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors
Crescentini, Marco
;TAMBURINI, CINZIA;Romani, Aldo;Tartagni, Marco
2018
Abstract
This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on firstgeneration current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.File | Dimensione | Formato | |
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