This paper presents an efficient implementation of a first-order modified-Volterra model for radio-frequency power amplifiers. Nonlinear dynamic effects displayed by such systems are described by nonlinear functionals that involve two-variable amplitude-frequency integral kernels. The Vector Fitting algorithm, typically employed for linear systems, is here exploited to provide a decomposition of Volterra kernels into a set of nonlinear static functions of the PA input and corresponding single-pole frequency responses. These are based on a set of global poles that efficiently describe the system dynamics and ultimately lead to a compact model representation. Model implementation results from CAD simulation data are reported for a 6W PA based on a gallium nitride (GaN) transistor.
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm / Alberto Maria Angelotti ; Gian Piero Gibiino ; Alberto Santarelli. - ELETTRONICO. - (2018), pp. 8430006.1-8430006.3. (Intervento presentato al convegno 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2018 tenutosi a fra nel 2018) [10.1109/INMMIC.2018.8430006].
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm
Alberto Maria Angelotti;Gian Piero Gibiino;Alberto Santarelli
2018
Abstract
This paper presents an efficient implementation of a first-order modified-Volterra model for radio-frequency power amplifiers. Nonlinear dynamic effects displayed by such systems are described by nonlinear functionals that involve two-variable amplitude-frequency integral kernels. The Vector Fitting algorithm, typically employed for linear systems, is here exploited to provide a decomposition of Volterra kernels into a set of nonlinear static functions of the PA input and corresponding single-pole frequency responses. These are based on a set of global poles that efficiently describe the system dynamics and ultimately lead to a compact model representation. Model implementation results from CAD simulation data are reported for a 6W PA based on a gallium nitride (GaN) transistor.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.