CRIS Current Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishGaAsN alloys belong to a class of semiconductors with fascinating physical properties. Indeed, a small amount of nitrogen incorporation in GaAs leads to a counterintuitive and large band-gap reduction, and to an unexpected sudden increase in the effective mass of electrons. Even more surprisingly, both electronic and structural changes can be reversed fully and in a tunable manner by hydrogen incorporation. In this paper, we combine x-ray absorption spectroscopy at the nitrogen edge with ab initio simulations to investigate the atomic geometry of N-H complexes in hydrogenated GaAsN. In this way, we provide experimental evidence that dihydrogen-nitrogen complexes with C2v symmetry are the most abundant species in hydrogenated GaAsN. This finding contradicts previous predictions of “in-line” N-H2 * complexes as the predominant species, and accounts for recent infrared absorption experiments.
| Titolo: | A new nitrogen-hydrogen complex in GaAsN revealed by X ray absorption spectroscopy | |
| Autore/i: | G. Ciatto; BOSCHERINI, FEDERICO; A. Amore Bonapasta; F. Filippone; A. Polimeni; M. Capizzi | |
| Autore/i Unibo: | ||
| Anno: | 2005 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.71.201301 | |
| Abstract: | GaAsN alloys belong to a class of semiconductors with fascinating physical properties. Indeed, a small amount of nitrogen incorporation in GaAs leads to a counterintuitive and large band-gap reduction, and to an unexpected sudden increase in the effective mass of electrons. Even more surprisingly, both electronic and structural changes can be reversed fully and in a tunable manner by hydrogen incorporation. In this paper, we combine x-ray absorption spectroscopy at the nitrogen edge with ab initio simulations to investigate the atomic geometry of N-H complexes in hydrogenated GaAsN. In this way, we provide experimental evidence that dihydrogen-nitrogen complexes with C2v symmetry are the most abundant species in hydrogenated GaAsN. This finding contradicts previous predictions of “in-line” N-H2 * complexes as the predominant species, and accounts for recent infrared absorption experiments. | |
| Data prodotto definitivo in UGOV: | 2005-09-23 23:10:26 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11585/6215
Copyright © 2021