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EnglishDilute nitrides, in particular In$_x$Ga$_{1-x}$As$_{1-y}$N$_y$ are very interesting alloys because of their actual and potential applications in the field of telecommunications and photovoltaic. A full knowledge of the local structure around each kind of atom, in particular the local ordering, is of fundamental importance because it is predicted to affect the electronics properties of these alloys. In this work we investigated the local environment of N and In by X-Ray Absorption Fine Structure, paying particular attention to demonstrate that N is substitutional to As and preferentially links In atoms
| Titolo: | Lattice location of N in InGaAsN dilute nitrogen alloys | |
| Autore/i: | G. Ciatto; BOSCHERINI, FEDERICO; F. D’Acapito; D. De Salvador; D. Batchelor; CARBONI, ROBERTA; L. Grenoulliet; H. Mariette; S. Mobilio | |
| Autore/i Unibo: | ||
| Anno: | 2005 | |
| Titolo del libro: | PROCEEDINGS OF THE 12th X-RAY ABSORPTION FINE STRUCTURE INTERNATIONAL CONFERENCE (XAFS12) | |
| Pagina iniziale: | 356 | |
| Pagina finale: | 358 | |
| Abstract: | Dilute nitrides, in particular In$_x$Ga$_{1-x}$As$_{1-y}$N$_y$ are very interesting alloys because of their actual and potential applications in the field of telecommunications and photovoltaic. A full knowledge of the local structure around each kind of atom, in particular the local ordering, is of fundamental importance because it is predicted to affect the electronics properties of these alloys. In this work we investigated the local environment of N and In by X-Ray Absorption Fine Structure, paying particular attention to demonstrate that N is substitutional to As and preferentially links In atoms | |
| Data prodotto definitivo in UGOV: | 23-set-2005 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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