Incorporation of dopants in semiconductors is commonly used to modify the optical response and improve the efficiency of related devices. A physical understanding with elemental and local sensitivity of the electron excitation and trapping channels which follow photoexcitation is a prerequisite for knowledge-based materials design. By using high-resolution x-ray absorption methods we show that, in V-doped TiO2 nanoparticles, subband-gap visible light absorption is predominantly due to excitation of electrons from V ions to defective and long-lived Ti sites. We thus identify an element-specific photoexcitation channel.

Element-specific channels for the photoexcitation of V-doped TiO2 nanoparticles

Giacomo, Rossi;Marco, Calizzi;Federico, Boscherini;Luca, Pasquini
2017

Abstract

Incorporation of dopants in semiconductors is commonly used to modify the optical response and improve the efficiency of related devices. A physical understanding with elemental and local sensitivity of the electron excitation and trapping channels which follow photoexcitation is a prerequisite for knowledge-based materials design. By using high-resolution x-ray absorption methods we show that, in V-doped TiO2 nanoparticles, subband-gap visible light absorption is predominantly due to excitation of electrons from V ions to defective and long-lived Ti sites. We thus identify an element-specific photoexcitation channel.
2017
Giacomo, Rossi; Marco, Calizzi; Lucia, Amidani; Andrea, Migliori; Federico, Boscherini; Luca, Pasquini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/606356
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