Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.
Low-Frequency Dynamic Drain Current Modeling in AlGaN-GaN HEMTs / V. Di Giacomo; A. Santarelli; F. Filicori; A. Raffo; G.Vannini; R. Aubry; C. Gaquière. - STAMPA. - (2007), pp. 68-71. (Intervento presentato al convegno 2nd European Microwave Integrated Circuit Conference - EuMIC2007 tenutosi a Munich, Germany nel Oct 2007).
Low-Frequency Dynamic Drain Current Modeling in AlGaN-GaN HEMTs
SANTARELLI, ALBERTO;FILICORI, FABIO;
2007
Abstract
Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
