Indium tin oxide (ITO) and silicon with a thermally grown SiO2 layer (Si/SiO2) substrates have been functionalized by ferrocene bound through Sn(O)x (x=2 or 3) linkers preliminarly grafted on the surface by reaction of the terminal hydroxyl groups with tetra(tert-butoxy)tin. The two steps modification of the surface was carried out by chemical vapour deposition metathesis reaction producing a self-assembled monolayer of ferrocene. The ITO and Si/SiO2 thus functionalized have been characterized by voltammetric, amperometric, electrochemical impedance spectroscopy and scanning probe microscopy techniques which assessed the formation of a stable and rather compact covalently bound ferrocenyl monolayer with improved electron transfer properties.
Petrizza, L., Genovese, D., Valenti, G., Iurlo, M., Fiorani, A., Paolucci, F., et al. (2016). Electrochemical and Surface Characterization of Dense Monolayers Grafted on ITO and Si/SiO2 Surfaces via Tetra (tert‐Butoxy) Tin Linker. ELECTROANALYSIS, 28, 2777-2784 [10.1002/elan.201600262].
Electrochemical and Surface Characterization of Dense Monolayers Grafted on ITO and Si/SiO2 Surfaces via Tetra (tert‐Butoxy) Tin Linker
PETRIZZA, LUCA;GENOVESE, DAMIANO;VALENTI, GIOVANNI;IURLO, MATTEO;FIORANI, ANDREA;PAOLUCCI, FRANCESCO;RAPINO, STEFANIA;MARCACCIO, MASSIMO
2016
Abstract
Indium tin oxide (ITO) and silicon with a thermally grown SiO2 layer (Si/SiO2) substrates have been functionalized by ferrocene bound through Sn(O)x (x=2 or 3) linkers preliminarly grafted on the surface by reaction of the terminal hydroxyl groups with tetra(tert-butoxy)tin. The two steps modification of the surface was carried out by chemical vapour deposition metathesis reaction producing a self-assembled monolayer of ferrocene. The ITO and Si/SiO2 thus functionalized have been characterized by voltammetric, amperometric, electrochemical impedance spectroscopy and scanning probe microscopy techniques which assessed the formation of a stable and rather compact covalently bound ferrocenyl monolayer with improved electron transfer properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.