Structural analysis of nanocrystalline Silicon layers deposited on oxidized and non-oxidized silicon substrates and on glass substrates by low-energy plasma-enhanced chemical vapour deposition technique was fulfilled by means of transmission electron microscopy. Low magnification and high resolution observations of specimens performed in plan-view and cross section are described and discussed. These results are compared to those obtained by atomic force microscopy study. Growth modes and relevant structural changes are tentatively correlated to elaboration parameters.
Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPCVD for Optoelectronic Applications / M Texier; M Acciarri; S Binetti; D Cavalcoli; A Cavallini; D Chrastina; G Isella; M Lancin; A Le Donne; A Tomasi; B Pichaud; S Pizzini; M Rossi. - STAMPA. - (2007), pp. 305-308. (Intervento presentato al convegno MICROSCOPY OF SEMICONDUCTING MATERIALS XV. tenutosi a CHURCHILL COLLEGE, CAMBRIDGE, UK. nel 2 – 5 APRIL 2007).
Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPCVD for Optoelectronic Applications
CAVALCOLI, DANIELA;CAVALLINI, ANNA;
2007
Abstract
Structural analysis of nanocrystalline Silicon layers deposited on oxidized and non-oxidized silicon substrates and on glass substrates by low-energy plasma-enhanced chemical vapour deposition technique was fulfilled by means of transmission electron microscopy. Low magnification and high resolution observations of specimens performed in plan-view and cross section are described and discussed. These results are compared to those obtained by atomic force microscopy study. Growth modes and relevant structural changes are tentatively correlated to elaboration parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
