X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.

New opportunities to study defects by soft X-ray absorption fine structure / F. Boscherini; D. De Salvador;G. Bisognin; G. Ciatto. - STAMPA. - (2007), pp. 473-478. (Intervento presentato al convegno Gettering and defect engineering in semiconductor technology XII tenutosi a Erice nel 14-19 ottobre 2007).

New opportunities to study defects by soft X-ray absorption fine structure

BOSCHERINI, FEDERICO;
2007

Abstract

X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.
2007
Gettering and defect engineering in semiconductor technology XII
473
478
New opportunities to study defects by soft X-ray absorption fine structure / F. Boscherini; D. De Salvador;G. Bisognin; G. Ciatto. - STAMPA. - (2007), pp. 473-478. (Intervento presentato al convegno Gettering and defect engineering in semiconductor technology XII tenutosi a Erice nel 14-19 ottobre 2007).
F. Boscherini; D. De Salvador;G. Bisognin; G. Ciatto
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/56409
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