ABSTRACT: Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic applications. Notwithstanding its wide application as the intrinsic layer in solar cells, many issues regarding its electronic and optical properties are not completely understood. The present contribution aims to report on electrical and optical characterization of nanocrystalline Si thin films grown by low energy plasma enhanced chemical vapour deposition (LEPECVD) as starting material for Si based thin film solar cells. Optical and electrical properties were studied in order to understand the role played by electronic levels associated with defect states and to study the electrical conduction mechanisms at the nanoscale. Optical and electrical characterizations were carried out by surface photovolage spectroscopy (SPS) and conductive atomic force microscopy (C-AFM), respectively.
D.Cavalcoli, A.Cavallini, M. Rossi, A.Tomasi, G Isella, and D. Chrastina (2007). OPTICAL AND ELECTRICAL CHARACTERIZATION OF HYDROGENATED NANOCRYSTALLINE SILICON FILMS. MUNCHEN : WIP.
OPTICAL AND ELECTRICAL CHARACTERIZATION OF HYDROGENATED NANOCRYSTALLINE SILICON FILMS
CAVALCOLI, DANIELA;CAVALLINI, ANNA;
2007
Abstract
ABSTRACT: Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic applications. Notwithstanding its wide application as the intrinsic layer in solar cells, many issues regarding its electronic and optical properties are not completely understood. The present contribution aims to report on electrical and optical characterization of nanocrystalline Si thin films grown by low energy plasma enhanced chemical vapour deposition (LEPECVD) as starting material for Si based thin film solar cells. Optical and electrical properties were studied in order to understand the role played by electronic levels associated with defect states and to study the electrical conduction mechanisms at the nanoscale. Optical and electrical characterizations were carried out by surface photovolage spectroscopy (SPS) and conductive atomic force microscopy (C-AFM), respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
