Nanostructured gratings of semicrystalline poly(propylene azelate) (PPAz) have been prepared over spin-coated thin films by Nanoimprint Lithography (NIL). The structure and morphology of the gratings have been investigated by combining Atomic Force Microscopy (AFM) and Grazing Incidence X-ray Scattering at small angle (GISAXS) and wide angle (GIWAXS). The results reveal that NIL affects significantly the orientation of the crystalline lamellae. PPAz gratings are more abundant in edge-on lamellae than the reference non-printed films. We attribute this effect to the PPAz preferential crystallization as flat-on lamellae on silicon surfaces either the stamp trench walls or the substrate surface. Thus, the flat-on lamellae on the trench walls appear to be edge-on lamellae in the printed sample. These results further support NIL as an appropriate procedure in order to control polymer crystal orientation.
Soccio, M., Rueda, D., García-Gutiérrez, M., Alayo, N., Pérez-Murano, F., Lotti, N., et al. (2015). Morphology of poly(propylene azelate) gratings prepared by nanoimprint lithography as revealed by atomic force microscopy and grazing incidence X-ray scattering. POLYMER, 61, 61-67 [10.1016/j.polymer.2015.01.066].
Morphology of poly(propylene azelate) gratings prepared by nanoimprint lithography as revealed by atomic force microscopy and grazing incidence X-ray scattering
SOCCIO, MICHELINA;LOTTI, NADIA;MUNARI, ANDREA;
2015
Abstract
Nanostructured gratings of semicrystalline poly(propylene azelate) (PPAz) have been prepared over spin-coated thin films by Nanoimprint Lithography (NIL). The structure and morphology of the gratings have been investigated by combining Atomic Force Microscopy (AFM) and Grazing Incidence X-ray Scattering at small angle (GISAXS) and wide angle (GIWAXS). The results reveal that NIL affects significantly the orientation of the crystalline lamellae. PPAz gratings are more abundant in edge-on lamellae than the reference non-printed films. We attribute this effect to the PPAz preferential crystallization as flat-on lamellae on silicon surfaces either the stamp trench walls or the substrate surface. Thus, the flat-on lamellae on the trench walls appear to be edge-on lamellae in the printed sample. These results further support NIL as an appropriate procedure in order to control polymer crystal orientation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.