We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on InxGa1−xN alloys with a very high In concentration.

Quantitative determination of in clustering in In-rich InxGa1-xN thin films

AMIDANI, LUCIA;BOSCHERINI, FEDERICO;
2014

Abstract

We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on InxGa1−xN alloys with a very high In concentration.
2014
Shang, X.; Luca, M.D.; Pettinari, G.; Bisognin, G.; Amidani, L.; Fonda, E.; Boscherini, F.; Berti, M.; Ciatto, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/519653
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