We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on InxGa1−xN alloys with a very high In concentration.
Shang, X., Luca, M., Pettinari, G., Bisognin, G., Amidani, L., Fonda, E., et al. (2014). Quantitative determination of in clustering in In-rich InxGa1-xN thin films. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 47(41), 415301-1-415301-7 [10.1088/0022-3727/47/41/415301].
Quantitative determination of in clustering in In-rich InxGa1-xN thin films
AMIDANI, LUCIA;BOSCHERINI, FEDERICO;
2014
Abstract
We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on InxGa1−xN alloys with a very high In concentration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
