The characteristics of the gate electrode have significant effects on the behavior of organic electrochemical transistors (OECTs), which are intensively investigated for applications in the booming field of organic bioelectronics. In this work, high specific surface area activated carbon (AC) was used as gate electrode material in OECTs based on the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulfonate) (PSS). We found that the high specific capacitance of the AC gate electrodes leads to high drain-source current modulation in OECTs, while their intrinsic quasi-reference characteristics make unnecessary the presence of an additional reference electrode to monitor the OECT channel potential.

Tang, H., Kumar, P., Zhang, S., Yi, Z., Crescenzo, G., Santato, C., et al. (2015). Conducting polymer transistors making use of activated carbon gate electrodes. ACS APPLIED MATERIALS & INTERFACES, 7(1), 969-973 [10.1021/am507708c].

Conducting polymer transistors making use of activated carbon gate electrodes

SOAVI, FRANCESCA;
2015

Abstract

The characteristics of the gate electrode have significant effects on the behavior of organic electrochemical transistors (OECTs), which are intensively investigated for applications in the booming field of organic bioelectronics. In this work, high specific surface area activated carbon (AC) was used as gate electrode material in OECTs based on the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulfonate) (PSS). We found that the high specific capacitance of the AC gate electrodes leads to high drain-source current modulation in OECTs, while their intrinsic quasi-reference characteristics make unnecessary the presence of an additional reference electrode to monitor the OECT channel potential.
2015
Tang, H., Kumar, P., Zhang, S., Yi, Z., Crescenzo, G., Santato, C., et al. (2015). Conducting polymer transistors making use of activated carbon gate electrodes. ACS APPLIED MATERIALS & INTERFACES, 7(1), 969-973 [10.1021/am507708c].
Tang, H.; Kumar, P.; Zhang, S.; Yi, Z.; Crescenzo, G.D.; Santato, C.; Soavi, F.; Cicoira, F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/515324
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